TRANSPARENT COMPOUND SEMICONDUCTOR AND P-TYPE DOPING METHOD THEREFOR

摘要

The present invention relates to a p-type doped transparent compound semiconductor and a p-type doping method therefor, and the purpose thereof is to provide a transparent compound semiconductor having transparency and electrical conductivity by being p-type doped on the basis of either (Ba,Sr)SnO 3 or SnO 2 . The present invention provides a p-type transparent compound semiconductor having either (Ba,Sr)SnO 3 or SnO 2 doped with M (M is one among Ru, Ga, Cu, Zn, K, Na or Rb), and a p-type doping method therefor. M substituted for (Ba,Sr) and Sn included in either (Ba,Sr)SnO 3 or SnO 2 has a composition of 0