Semiconductor device

摘要

The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current.

主权项

1. A semiconductor device comprising:
an oxide semiconductor layer; a gate overlapping with the oxide semiconductor layer; a first conductive layer electrically connected to the oxide semiconductor layer and overlapping with the gate; a second conductive layer over the oxide semiconductor layer and overlapping with the gate, the second conductive layer electrically connected to the oxide semiconductor layer; an insulating layer over the second conductive layer, the insulating layer including an opening portion; and a wiring electrically connected to the second conductive layer through the opening portion, wherein the opening portion is positioned between a first part of the first conductive layer and a second part of the first conductive layer.