Method for manufacturing semiconductor device

摘要

A method for manufacturing a semiconductor device may include forming a gate structure that includes a dummy gate member on a substrate. The method may further include forming two first-type spacers such that the dummy gate member is positioned between the first-type spacers. The method may further include forming two second-type spacers such that the first-type spacers are positioned between the second-type spacers. The method may further include forming two third-type spacers such that the second-type spacers are positioned between the third-type spacers. The method may further include performing etch to remove the third-type spacers and to at least partially remove the second-type spacers. The method may further include removing at least a portion of the dummy gate member to form a space between remaining portions of the first-type spacers. The method may further include providing a metal material in the space for forming a metal gate member.

主权项

1. A method for manufacturing a semiconductor device, the method comprising:
forming a dummy gate structure on a substrate, the dummy gate structure comprising a dummy gate member; forming two first-type spacers such that the dummy gate member is positioned between the two first-type spacers; forming two second-type spacers such that the two first-type spacers and the dummy gate member are positioned between the two second-type spacers; forming two third-type spacers such that the two second-type spacers, the two first-type spacers, and the dummy gate member are positioned between the two third-type spacers; performing etch to substantially completely remove the two third-type spacers and to at least partially remove the two second-type spacers; removing at least a first portion of the dummy gate member to form a space between remaining portions of the two first-type spacers; and providing a metal material in the space for forming a metal gate member.