Impurity doped UV protection layer

摘要

An ultra-violet (UV) protection layer is formed over a semiconductor workpiece before depositing a UV curable dielectric layer. The UV protection layer prevents UV light from reaching and damaging underlying material layers and electrical devices. The UV protection layer comprises a layer of silicon doped with an impurity, wherein the impurity comprises O, C, H, N, or combinations thereof. The UV protection layer may comprise SiOC:H, SiON, SiN, SiCO:H, combinations thereof, or multiple layers thereof, as examples.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a non-planar etch stop layer over a workpiece, over a top surface of a gate electrode, and over a gate sidewall spacer, the non-planar etch stop layer not extending planarly in a direction parallel to a top surface of the workpiece; forming a first ultra-violet (UV) protection layer over the non-planar etch stop layer, the first UV protection layer abutting the non-planar etch stop layer and being planar; forming a dielectric layer over the first UV protection layer; exposing a bulk portion of the dielectric layer to UV light to cure the dielectric layer, wherein the first UV protection layer absorbs at least a portion of the UV light; and forming a second UV protection layer over the dielectric layer.