Optoelectronic semiconductor chip

摘要

An optoelectronic semiconductor chip includes a semiconductor layer stack including a nitride compound semiconductor material on a carrier substrate, wherein the semiconductor layer stack includes an active layer that emits an electromagnetic radiation, the semiconductor layer stack being arranged between a layer of a first conductivity and a layer of a second conductivity, the layer of the first conductivity is adjacent a front of the semiconductor layer stack, the layer of the first conductivity electrically connects to a first electrical connection layer covering at least a portion of a back of the semiconductor layer stack, and the layer of the second conductivity type electrically connects to a second electrical connection layer arranged at the back.

主权项

1. An optoelectronic semiconductor chip comprising:
a semiconductor layer stack comprising a nitride compound semiconductor material on a carrier substrate, a conversion element arranged in the semiconductor layer stack and/or on the front, wherein the semiconductor layer stack comprises a layer of a first conductivity and a layer of a second conductivity and an active layer that emits an electromagnetic radiation, wherein the active layer is arranged between the layer of a first conductivity and the layer of a second conductivity, the conversion element is configured to convert at least some of the radiation emitted by the active layer during operation into radiation of another wavelength, the layer of the first conductivity is adjacent a front of the semiconductor layer stack, the layer of the first conductivity electrically connects to a first electrical connection layer covering at least a portion of a back of the semiconductor layer stack, and the layer of the second conductivity electrically connects to a second electrical connection layer arranged at the back.