发明名称 |
Light emitting diode |
摘要 |
Disclosed herein is a light emitting diode. The light emitting diode includes a substrate, an n-type semiconductor layer placed on the substrate, an active layer placed on the n-type semiconductor layer, a p-type semiconductor layer placed on the active layer, a reflective layer placed on the p-type semiconductor layer, an n-type electrode electrically connected to the n-type semiconductor layer, a p-type electrode placed on the reflective layer; and a first patterned magnetic structure placed on the reflective layer, and separated from the p-type electrode. The light emitting diode can provide improved internal quantum efficiency using the patterned magnetic structure. |
申请公布号 |
US9136433(B2) |
申请公布日期 |
2015.09.15 |
申请号 |
US201414502597 |
申请日期 |
2014.09.30 |
申请人 |
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
Park Seong-Ju;Kim Jae-Joon;Leem Youngchul |
分类号 |
H01L33/46;H01L33/58;H01L33/14 |
主分类号 |
H01L33/46 |
代理机构 |
Lowe Hauptman & Ham, LLP |
代理人 |
Lowe Hauptman & Ham, LLP |
主权项 |
1. A light emitting diode comprising:
a substrate; an n-type semiconductor layer placed on the substrate; an active layer placed on the n-type semiconductor layer; a p-type semiconductor layer placed on the active layer; a reflective layer placed on the p-type semiconductor layer; an n-type electrode electrically connected to the n-type semiconductor layer; a p-type electrode placed on the reflective layer; and a first patterned magnetic structure placed on the reflective layer and separated from the p-type electrode. |
地址 |
Gwangju KR |