发明名称 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
摘要 The present invention relates to a positive resist material having a polymerized compound having a molecular weight (Mw) of 1,000-500,000 as a base resin and comprising: a recurring unit having a carboxyl group and/or phenolic hydroxyl group substituted with an acid labile group; a recurring unit of 2-pyrone ester represented by the formula (1). In formula 1, R^1 is a hydrogen atom or a methyl group; R^2 is a methyl group or ethyl group; and X is a single bond, a linking group of C1-C12 having an ester group, an ether group, or a lactone ring, a phenylene group, or a naphthylene group. The positive resist material of the present invention has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.
申请公布号 KR20150104039(A) 申请公布日期 2015.09.14
申请号 KR20150028961 申请日期 2015.03.02
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HATAKEYAMA JUN;HASEGAWA KOJI;SAGEHASHI MASAYOSHI
分类号 G03F7/039;G03F7/004 主分类号 G03F7/039
代理机构 代理人
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