发明名称 SEMICONDUCTOR DEVICE AND INTERCONNECT SUBSTRATE
摘要 <p>A semiconductor substrate includes a semiconductor chip and an interconnect substrate. The interconnect substrate has an interconnect region between a first main surface formed with plural orderly arranged first and second signal electrodes connected to the semiconductor chip, and a second main surface. The interconnect region has a core substrate, interconnect layers formed on both surfaces thereof, plural first through holes and plural first vias that pass through the interconnect layer on the side of the first main surface for forming impedance matching capacitances. Each first through hole is connected to a first signal interconnect at a position spaced part from the first signal electrode by a first interconnect length and each first via is connected to the second signal interconnect at a position spaced apart from the second signal electrode by a second interconnect length that is substantially equal with the first interconnect length.</p>
申请公布号 HK1201985(A1) 申请公布日期 2015.09.11
申请号 HK20150102309 申请日期 2015.03.06
申请人 RENESAS ELECTRONICS CORPORATION 发明人 SHUUICHI KARIYAZAKI;RYUICHI OIKAWA
分类号 H01L 主分类号 H01L
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