发明名称 PHYSICALLY UNCLONABLE FUNCTION CIRCUIT USING RESISTIVE MEMORY DEVICE
摘要 Described is a physically unclonable functional circuit comprising: a resistive memory device (e.g., an MTJ device) having at least two terminals; a transistor coupled to one of the at least two terminals of the resistive memory device; and an analog-to-digital converter (ADC) having an input coupled to the one of the at least two terminals of the resistive memory device.
申请公布号 WO2015134037(A1) 申请公布日期 2015.09.11
申请号 WO2014US21696 申请日期 2014.03.07
申请人 INTEL CORPORATION 发明人 AUGUSTINE, CHARLES;TOKUNAGA, CARLOS;TSCHANZ, JAMES W.
分类号 G11C7/24 主分类号 G11C7/24
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