ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, PIEZOELECTRIC COMPONENT, AND METHOD FOR MANUFACTURING ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM

摘要

An aluminum nitride piezoelectric thin film having nitrogen polarity (N polarity) is obtained with exceptional productivity. Provided are an aluminum nitride piezoelectric thin film (3) containing germanium, and a method for manufacturing an aluminum nitride piezoelectric thin film by growing an aluminum nitride piezoelectric thin film containing germanium on a base material (2), through a sputtering process.