| 摘要 |
In transistor manufacture of the present invention, a film substrate having three or more alignment marks formed thereon is used, the alignment marks are detected, and corresponding to results of the detection, a substrate expansion/contraction control is performed one or more times. Consequently, in the manufacture of a transistor having a film as a substrate, transistor constituting members, such as a source electrode and a drain electrode, can be formed without a pattern shift due to substrate expansion/contraction caused by an environmental change. |
