| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor multilayer structure having a &bgr;-GaO-based single crystal substrate and a nitride semiconductor layer of high crystal quality formed thereon, and a semiconductor element containing the semiconductor multilayer structure.SOLUTION: A semiconductor multilayer structure 40 includes a &bgr;-GaO-based single crystal substrate 1 and a nitride semiconductor layer 42. The &bgr;-GaO-based single crystal substrate 1 has any one plane of (-201), (101), (310), and (3-10) as a principal plane 4. The substrate 1 does not contain a twin crystal plane 3 or has a region 2 that does not contain the twin crystal plane 3, the region 2 having a maximum width of 2 inches or more in the direction vertical to a line of intersection between the twin crystal plane 3 and the principal plane 4. The nitride semiconductor layer 42 has an AlGaInN (0≤x≤1, 0≤y≤1, 0≤z≤1, x+y+z=1) crystal formed on the &bgr;-GaO-based single crystal substrate 1 by epitaxial growth. |
