COMPLEMENTARY METAL OXIDE SEMICONDUCTOR TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

A fabricating method of CMOS transistor includes following steps. A first gate and a second gate are formed on a substrate. A gate insulator is formed on the substrate to cover the first and second gates. A first source, a first drain, a second source, and a second drain are formed on the gate insulator. The first source and the first drain are above the first gate. The second source and the second drain are above the second gate. A first channel layer and a mask layer are formed on the gate insulator. The mask layer is on the first channel layer. The first channel layer is above the first gate and contacts with the first source and the first drain. A second channel layer is formed on the gate insulator. The second channel layer is above the second gate and contacts with the second source and the second drain.

主权项

1. A fabricating method of a complementary metal oxide semiconductor transistor comprising:
forming a first channel layer on a substrate; forming a bottom gate, a first source, and a first drain on the substrate, wherein the first source and the first drain are in contact with the first channel layer; forming a gate insulator on the substrate to cover the bottom gate, the first source, and the first drain; forming a second channel layer on the gate insulator, wherein the second channel layer is located above the bottom gate; and forming a top gate, a second source, and a second drain on the gate insulator, wherein the top gate is located above the first channel layer, and the second source and the second drain are in contact with the second channel layer.