| 发明名称 |
THROUGH-SILICON VIA (TSV)-BASED DEVICES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS |
| 摘要 |
Embodiments of the present disclosure are directed toward through-silicon via (TSV)-based devices and associated techniques and configurations. In one embodiment, an apparatus includes a die having active circuitry disposed on a first side of the die and a second side disposed opposite to the first side, a bulk semiconductor material disposed between the first side and the second side of the die and a device including one or more of a capacitor, resistor or resonator disposed in the bulk semiconductor material, the capacitor, resistor or resonator including one or more TSV structures that extend through the bulk semiconductor material, an electrically insulative material disposed in the one or more TSV structures and an electrode material or resistor material in contact with the electrically insulative material within the one or more TSV structures. |
| 申请公布号 |
US2015255372(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201414203415 |
申请日期 |
2014.03.10 |
| 申请人 |
Kamgaing Telesphor |
发明人 |
Kamgaing Telesphor |
| 分类号 |
H01L23/48;H01L49/02;B81B7/00;H01L21/768 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus comprising:
a die having active circuitry disposed on a first side of the die and a second side disposed opposite to the first side; a bulk semiconductor material disposed between the first side and the second side of the die; and a device including one or more of a capacitor, resistor or resonator disposed in the bulk semiconductor material, the capacitor, resistor or resonator including:
one or more through-silicon via (TSV) structures that extend through the bulk semiconductor material;an electrically insulative material disposed in the one or more TSV structures; andan electrode material or resistor material in contact with the electrically insulative material within the one or more TSV structures. |
| 地址 |
Chandler AZ US |
