发明名称 |
SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF |
摘要 |
A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes an electro-wetting-on-dielectric (EWOD) device. The EWOD device includes a top portion over a bottom portion and a channel gap between the top portion and the bottom portion. The bottom portion includes a driving dielectric layer over a first electrode, a second electrode and a first separating portion of an ILD layer between the first electrode and a second electrode. The driving dielectric layer has a first thickness less than about 1,000 Å. An EWOD device with a driving dielectric layer having a first thickness less 1000 Å requires a lower applied voltage to alter a shape of a droplet within the device and has a longer operating life than an EWOD device that requires a higher applied voltage to alter the shape of the droplet. |
申请公布号 |
US2015253283(A1) |
申请公布日期 |
2015.09.10 |
申请号 |
US201414200148 |
申请日期 |
2014.03.07 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Chang Yi-Hsien;Cheng Chun-Ren |
分类号 |
G01N27/447;H01L21/768 |
主分类号 |
G01N27/447 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor arrangement comprising:
a first electrode adjacent a second electrode in a dielectric layer, the first electrode separated from the second electrode by a first separating portion of the dielectric layer, the dielectric layer formed over a first substrate; and a driving dielectric layer over and in contact with the first electrode, the second electrode and the first separating portion. |
地址 |
Hsin-Chu TW |