ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY AND STORAGE ARRAY OF THE SAME

摘要

An Electrically Erasable Programmable Read-Only Memory (EEPROM) and an EEPROM storage array are provided. The EEPROM storage array includes: at least one storage area, wherein the storage area comprises M word lines in a row direction, 8 bit lines in a column direction, 8 source lines in the column direction, and a plurality of storage units arranged in M rows and 8 columns, where M is a positive integer; and wherein gate electrodes of storage units in a same row are connected with a same word line, drain electrodes of storage units in a same column are connected with a same bit line, and source electrodes of storage units in a same column are connected with a same source line. The EEPROM's volume is reduced by connecting source electrodes of storage units in a same column to a same source line, and arranging the source lines in a column direction.

主权项

1. An Electrically Erasable Programmable Read-Only Memory (EEPROM) storage array, comprising: at least one storage area,
wherein the storage area comprises M word lines in a row direction, 8 bit lines in a column direction, 8 source lines in the column direction, and a plurality of storage units arranged in M rows and 8 columns, where M is a positive integer; wherein each storage unit comprises a gate electrode, a drain electrode and a source electrode; and wherein gate electrodes of storage units in a same row are connected with a same word line, drain electrodes of storage units in a same column are connected with a same bit line, and source electrodes of storage units in a same column are connected with a same source line.