发明名称 SEMICONDUCTOR DEVICES AND METHODS FOR FORMING PATTERNED RADIATION BLOCKING ON A SEMICONDUCTOR DEVICE
摘要 Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.
申请公布号 US2015255502(A1) 申请公布日期 2015.09.10
申请号 US201514716628 申请日期 2015.05.19
申请人 Micron Technology, Inc. 发明人 Borthakur Swarnal;Sulfridge Marc
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A method of manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit, the method comprising: covering the electrical connectors with a radiation blocking layer that is at least substantially non-photoreactive; forming apertures aligned with the electrical connectors through a layer of photo-resist on the IR blocking layer; and etching openings in the IR blocking layer through the apertures of the photo-resist layer.
地址 Boise ID US