METHOD FOR MANUFACTURING TRENCH GATE TYPE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a trench gate type semiconductor device, in which: a cell pitch can be reduced even when a wide band gap semiconductor is used as a main semiconductor substrate; good ohmic contact can be obtained; and an excessive electric field is prevented from being applied to an insulating film in a bottom of a trench.SOLUTION: A method for manufacturing a trench gate type MOSFET as a method of forming an intersection trench 10p comprises the steps of: forming a gate trench 10b as a double trench structure; backfilling the gate trench 10b with mask material; patterning the mask material; using the mask material as a mask to form the intersection trench; providing the intersection trench 10p intersecting the gate trench so as to be deeper than the gate trench 10b; and providing a Schottky electrode 24 in a bottom of the intersection trench 10p.