发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
An insulating film (2) is formed on a main surface of a semiconductor substrate (1) that includes an active region and a termination region. The insulating film (2) in the active region is etched to form an opening (3). The insulating film (2) is used as a mask and an impurity is implanted into the semiconductor substrate (1) in a direction tilted by 20° or more from a direction normal to the main surface of the semiconductor substrate (1) while rotating the semiconductor substrate (1) to form a diffusion layer (7) in the active region. The diffusion layer (7) extends wider than the opening (3) up to below the insulating film (2) on the termination region side. |
申请公布号 |
US2015255290(A1) |
申请公布日期 |
2015.09.10 |
申请号 |
US201214433191 |
申请日期 |
2012.12.07 |
申请人 |
Masuoka Fumihito;Nakamura Katsumi;Kachi Takao |
发明人 |
Masuoka Fumihito;Nakamura Katsumi;Kachi Takao |
分类号 |
H01L21/265;H01L29/10;H01L29/06 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |