VTFT INCLUDING OVERLAPPING ELECTRODES

摘要

A vertical transistor includes a substrate and an electrically conductive gate structure having a top surface and including a reentrant profile. A conformal electrically insulating layer that maintains the reentrant profile is in contact with the electrically conductive gate structure and at least a portion of the substrate. A conformal semiconductor layer that maintains the reentrant profile is in contact with the conformal electrically insulating layer. An electrode that extends into the reentrant profile is in contact with a first portion of the semiconductor layer. Another electrode is vertically spaced apart from the electrode, overlaps a portion of the electrode that extends into the reentrant profile, is in contact with a second portion of the semiconductor material layer over the top surface of the electrically conductive gate structure, and is within the reentrant profile.

主权项

1. A vertical transistor comprising:
a substrate; an electrically conductive gate structure including a reentrant profile, the electrically conductive gate structure having a top surface; a conformal electrically insulating layer that maintains the reentrant profile and is in contact with the electrically conductive gate structure and at least a portion of the substrate; a conformal semiconductor layer that maintains the reentrant profile and is in contact with the conformal electrically insulating layer; an electrode that extends into the reentrant profile and is in contact with a first portion of the semiconductor layer; and another electrode that is vertically spaced apart from the electrode, overlaps a portion of the electrode that extends into the reentrant profile, is in contact with a second portion of the semiconductor material layer over the top surface of the electrically conductive gate structure, and is within the reentrant profile.