| 摘要 |
<p>Provided is a silicon carbide semiconductor device and a manufacturing method for the same wherein the ohmic electrode is not destroyed during wire bonding employing ultrasonic oscillation. The silicon carbide semiconductor device is provided with a silicon carbide substrate (1), an n-type silicon carbide layer (2) formed on the silicon carbide substrate (1), a p-type impurity region (3) formed proximate to the surface of the n-type silicon carbide layer (2), a p-type ohmic electrode (4) formed on top of the p-type impurity region (3), and a Schottky electrode (5) formed on top of the n-type silicon carbide layer (2) so as to cover the p-type ohmic electrode (4). The p-type ohmic electrode (4) is formed in a recess (3a) provided in the surface of the p-type impurity region (3). The upper surface of the p-type ohmic electrode is lower than a surface (2a) of the n-type silicon carbide layer.</p> |
