Method of fabricating a semiconductor device having a capping layer

摘要

A method of semiconductor device fabrication includes forming a first dummy gate structure in a first region of a semiconductor substrate and forming a second dummy gate structure in a second region of the semiconductor substrate. A protective layer (e.g., oxide and/or silicon nitride hard mask) is formed on the second dummy gate structure. The first dummy gate structure is removed after forming the protective layer, thereby providing a first trench. A capping layer (e.g., silicon) is formed in the first trench. A metal gate structure may be formed on the capping layer. The protective layer may protect the second dummy gate structure during the removal of the first dummy gate structure.

主权项

1. A method of semiconductor device fabrication, comprising:
forming a first dummy gate structure in a first region of a semiconductor substrate; forming a second dummy gate structure in a second region of the semiconductor substrate; forming a protective layer over the second dummy gate structure; removing the first dummy gate structure while the protective layer is disposed over the second dummy structure, wherein the removing the first dummy gate structure provides a first trench; forming a capping layer in the first trench, while the protective layer is disposed over the second dummy structure.