Methods of forming semiconductor structures comprising aluminum oxide

摘要

A semiconductor structure comprising aluminum oxide. The semiconductor structure comprises a dielectric material overlying a substrate. The aluminum oxide overlies the dielectric material in a first region of the structure. A second region of the structure includes a first titanium nitride portion overlying the dielectric material, magnesium over the first titanium nitride portion, and a second titanium nitride portion over the magnesium. Methods of forming the semiconductor structure including aluminum oxide are also disclosed.

主权项

1. A method of forming a semiconductor structure, the method comprising:
exposing a dielectric material and a metal nitride on a substrate to an aluminum precursor and an oxygen precursor to form aluminum oxide over the dielectric material and a metal-aluminum compound over the metal nitride; and exposing the aluminum oxide and the metal-aluminum compound to a solution comprising hydrogen peroxide.