发明名称 |
Light-emitting diode with textured substrate |
摘要 |
A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions. |
申请公布号 |
US9130115(B2) |
申请公布日期 |
2015.09.08 |
申请号 |
US201414187438 |
申请日期 |
2014.02.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Yu Chen-Hua;Chiou Wen-Chih;Chen Ding-Yuan;Yu Chia-Lin;Lin Hung-Ta |
分类号 |
H01L27/15;H01L29/26;H01L31/12;H01L33/00;H01L33/22;H01L33/24;H01L33/06;H01L33/32 |
主分类号 |
H01L27/15 |
代理机构 |
Muncy, Geissler, Olds & Lowe, P.C. |
代理人 |
Muncy, Geissler, Olds & Lowe, P.C. |
主权项 |
1. An apparatus, comprising:
a substrate; a patterned dielectric mask layer disposed over the substrate, wherein the patterned dielectric mask layer defines a plurality of openings; a plurality of raised regions disposed over the substrate and within the openings, wherein the raised regions each have a non-planar upper surface; a plurality of III-N compound components that are each disposed over the non-planar upper surface of a respective one of the raised regions, wherein the III-N compound components each have a first type of conductivity; a plurality of multiple-quantum well (MQW) components that are each disposed over a respective one of the III-N compound components; and a III-N compound layer disposed over the MQW components and over the patterned dielectric mask layer, wherein the III-N compound layer has a second type of conductivity different from the first type. |
地址 |
HsinChu TW |