发明名称 Light-emitting diode with textured substrate
摘要 A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
申请公布号 US9130115(B2) 申请公布日期 2015.09.08
申请号 US201414187438 申请日期 2014.02.24
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 Yu Chen-Hua;Chiou Wen-Chih;Chen Ding-Yuan;Yu Chia-Lin;Lin Hung-Ta
分类号 H01L27/15;H01L29/26;H01L31/12;H01L33/00;H01L33/22;H01L33/24;H01L33/06;H01L33/32 主分类号 H01L27/15
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. An apparatus, comprising: a substrate; a patterned dielectric mask layer disposed over the substrate, wherein the patterned dielectric mask layer defines a plurality of openings; a plurality of raised regions disposed over the substrate and within the openings, wherein the raised regions each have a non-planar upper surface; a plurality of III-N compound components that are each disposed over the non-planar upper surface of a respective one of the raised regions, wherein the III-N compound components each have a first type of conductivity; a plurality of multiple-quantum well (MQW) components that are each disposed over a respective one of the III-N compound components; and a III-N compound layer disposed over the MQW components and over the patterned dielectric mask layer, wherein the III-N compound layer has a second type of conductivity different from the first type.
地址 HsinChu TW