Three dimensional memory structure

摘要

A method to fabricate a three dimensional memory structure includes forming an array stack, creating a layer of sacrificial material above the array stack, etching a hole through the layer of sacrificial material and the array stack, creating a pillar of semiconductor material in the hole to form at least two vertically stacked flash memory cells that use the pillar as a common body, removing at least some of the layer of sacrificial material around the pillar to expose a portion of the pillar, and forming a field effect transistor (FET) using the portion of the pillar as the body of the FET.

主权项

1. A method to fabricate a three dimensional memory structure comprising:
forming an array stack; creating a layer of sacrificial material above the array stack; etching a hole through the layer of sacrificial material and at least a portion of the array stack; creating a pillar of semiconductor material in the hole to form at least two vertically stacked flash memory cells that use said pillar as a common body; removing at least some of the layer of sacrificial material around said pillar to expose at least a portion of said pillar; etching away some of the exposed portion of said pillar; and forming a field effect transistor (FET) using the exposed portion of said pillar as a body of the FET.