Buried low-resistance metal word lines for cross-point variable-resistance material memories

摘要

Variable-resistance material memories include a buried salicide word line disposed below a diode. Variable-resistance material memories include a metal spacer spaced apart and next to the diode. Processes include the formation of one of the buried salicide word line and the metal spacer. Devices include the variable-resistance material memories and one of the buried salicided word line and the spacer word line.

主权项

1. An apparatus comprising:
an upper semiconductive substrate disposed above a lower semiconductive substrate, wherein the upper semiconductive substrate includes a pillar that is isolated by a shallow trench isolation structure; an epitaxial first film disposed on an upper surface of the pillar; an epitaxial second film disposed above and on the epitaxial first film, wherein the epitaxial first film and the epitaxial second film form a diode; a variable resistance material disposed between a top electrode and a bottom electrode, the bottom electrode electrically and directly connected to a silicide contact that is directly connected to the diode; and a salicide word line having at least a portion disposed below the epitaxial first film and in the upper semiconductive substrate above the lower semiconductive substrate, the salicide word line being physically separated from the epitaxial first film, the salicide word line disposed horizontally between the pillar and the shallow trench isolation structure and the salicide word line contacts the pillar and the shallow trench isolation structure, the salicide word line having an outer surface coplanar with an outer surface of the upper semiconductive substrate, and a top surface of the upper semiconductive substrate being above a top surface of the salicide word line.