发明名称 |
Organic light-emitting diode displays with semiconducting-oxide and silicon thin-film transistors |
摘要 |
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure. |
申请公布号 |
US9129927(B2) |
申请公布日期 |
2015.09.08 |
申请号 |
US201414229232 |
申请日期 |
2014.03.28 |
申请人 |
Apple Inc. |
发明人 |
Gupta Vasudha;Choi Jae Won;Chang Shih Chang;Tsai Tsung-Ting;Park Young Bae |
分类号 |
H01L35/24;H01L27/32;H01L27/12;G09G3/36;G02F1/1368 |
主分类号 |
H01L35/24 |
代理机构 |
Treyz Law Group |
代理人 |
Treyz Law Group ;Treyz G. Victor;Guihan Joseph F. |
主权项 |
1. A display pixel circuit in a display pixel in an organic light-emitting diode display, comprising:
a light-emitting diode; a semiconducting oxide thin-film transistor coupled to the light-emitting diode, wherein the semiconducting oxide thin-film transistor comprises a drive transistor having a gate; a silicon thin-film transistor; a capacitor coupled between the gate and the light-emitting diode, wherein the capacitor has first and second electrode layers; and a layer of metal that is patterned to form the gate and the first electrode layer. |
地址 |
Cupertino CA US |