Mixed abrasive tungsten CMP composition

摘要

A chemical mechanical polishing composition includes a water based liquid carrier and first and second silica abrasives dispersed in the liquid carrier. The first silica abrasive is a colloidal silica abrasive having a permanent positive charge of at least 10 mV. The second silica abrasive has a neutral charge or a non-permanent positive charge. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

主权项

1. A chemical mechanical polishing composition comprising:
a water based liquid carrier; a first silica abrasive dispersed in the liquid carrier, the first silica abrasive being a colloidal silica abrasive having a permanent positive charge of at least 10 mV; and a second silica abrasive dispersed in the liquid carrier, the second silica abrasive having a neutral charge or a non-permanent positive charge.