| 摘要 |
The present invention relates to a shift resister. In particular, provided is a shift resister, in which an upper end of an oxide thin film transistor formed on a stage is covered by a metal layer. To this end, the shift resister according to the present invention includes a plurality of stages for sequentially outputting scan pulses to gate lines formed in a panel. Each of the stages comprises: a pull-up thin film transistor turned on or turned off according to a logic state of a Q node, and outputting the scan pulse when being turned on; and a control unit consisting of a plurality of control thin film transistors connected to the Q node to control a logic state of the Q node. An upper side of at least one of the pull-up thin film transistor and the control thin film transistor is covered by a metal layer. |
