THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME

摘要

The embodiment of the present invention relates to a thin film transistor, a manufacturing method thereof, and a flat panel display device including the same. The thin film transistor includes: a gate electrode which is formed on a substrate; a gate insulation layer which is formed on the substrate including the gate electrode; an oxide semiconductor layer which is formed on the gate insulation layer including the gate electrode and includes a source region, a channel region, and a drain region; an oxide buffer layer which is formed on the oxide semiconductor layer and has a carrier density lower than the carrier density of the oxide semiconductor layer; a protection layer which is formed on the oxide buffer layer and the gate insulation layer, and has a contact hole to expose the oxide buffer layer of the source region and the drain region; and a source electrode and a drain electrode which are connected to the oxide buffer layer of the source region and the drain region through the contact hole.