| 发明名称 |
GRAPHENE FILM MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
A method of manufacturing a graphene film manufactures a graphene film in good state without generating wrinkles and stresses and leaving residues of the resin. The method of manufacturing a graphene film comprises forming a catalyst metal film on a substrate; synthesizing a graphene film on the catalyst metal film; and removing the metal catalyst film in an oxidation atmosphere of an oxidizer and transferring the graphene film to the substrate. |
| 申请公布号 |
US2015249034(A1) |
申请公布日期 |
2015.09.03 |
| 申请号 |
US201514631033 |
申请日期 |
2015.02.25 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
Kondo Daiyu;Nakano Haruhisa |
| 分类号 |
H01L21/762;H01L29/16;H01L23/532;H01L21/04;H01L21/285;H01L21/768;H01L29/66;H01L21/02 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of manufacturing a graphene film comprising:
forming a catalyst metal film on a substrate; synthesizing a graphene film on the catalyst metal film; and removing the catalyst metal film in an oxidation atmosphere of an oxidizer and transferring the graphene film to the substrate. |
| 地址 |
Kawasaki-shi JP |
