SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To save an etching process for forming a trench of a contact part.SOLUTION: When forming a p-type impurity layer 3 in a semiconductor device manufacturing method, a dent is made to be left at a central part of a portion formed in a recess 2a of the p-type impurity layer 3. And the dent serves as a contact trench 3c. This saves etching for forming the contact trench 3c to avoid an increase in manufacturing processes.