| 摘要 |
The present invention improves the line edge roughness of a resist pattern without deteriorating the etching resistance of a resist pattern. A resist pattern (402) is formed on a wafer by performing a photolithography process on the wafer. The side chain of the resist pattern (402) is cut by irradiating the resist pattern (402) with an UV ray. The line edge roughness of the resist pattern (402) is improved. A process agent is supplied to the resist pattern (402). Metal (404) is infiltrated into the resist pattern (402) through the process agent. After that, the wafer is heated and the process agent is volatilized. Therefore, a harden resist pattern is formed. |
