| 摘要 |
<p>According to the present invention, a chemical vapor deposition device comprises: a process chamber; a susceptor supporting a wafer inside the process chamber; and a shower head installed inside the process chamber to have a first chamber having a plurality of divided spaces, selectively injecting a first process gas or a carrier gas from the space towards the susceptor, and to have a second chamber having the single space and injecting a second process gas inside the process chamber. According to the present invention, the present invention has at least one or more modules selectively controlling the process gas and the carrier gas supplied from the shower head to the process chamber in order to control and supply a flow of each gas in accordance with each process situation to evenly perform thin film deposition.</p> |
