SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a semiconductor light emitting element includes a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode. The reflection layer is made of a metal and has a first surface and a second surface opposite to the first surface. The semiconductor stacked body is provided on a side of the first surface of the reflection layer. The first bonding electrode is provided between the second surface and the support substrate and includes a convex portion projected toward the support substrate and a bottom portion provided around the convex portion in plan view. The second bonding electrode includes a concave portion fitted in the convex portion of the first bonding electrode and is capable of bonding the support substrate and the first bonding electrode.

主权项

1. A method for manufacturing a semiconductor light emitting element, comprising:
forming a semiconductor stacked body including a light emitting layer on a crystal growth substrate; forming a reflection layer on the semiconductor stacked body; forming a first bonding electrode covering the reflection layer and including a convex portion and a bottom portion provided around the convex portion; forming a second bonding electrode made of a solder material on a support substrate; bonding the first bonding electrode and the support substrate by stacking the first bonding electrode and the second bonding electrode, heating the first bonding electrode and the second bonding electrode to higher than or equal to melting point of the solder material with pressurization, and filling a step difference between the convex portion and the bottom portion of the first bonding electrode; and removing the crystal growth substrate.