SEMICONDUCTOR DEVICE, DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE, DISPLAY MODULE INCLUDING THE DISPLAY DEVICE, AND ELECTRONIC APPLIANCE INCLUDING THE SEMICONDUCTOR DEVICE, THE DISPLAY DEVICE, OR THE DISPLAY MODULE

摘要

A semiconductor device including a transistor is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film, a third insulating film over the source electrode, and a fourth insulating film over the drain electrode. A fifth insulating film including oxygen is provided over the transistor. The third insulating film includes a first portion, the fourth insulating film includes a second portion, and the fifth insulating film includes a third portion. The amount of oxygen molecules released from each of the first portion and the second portion is smaller than the amount of oxygen molecules released from the third portion when the amounts are measured by thermal desorption spectroscopy.

主权项

1. A semiconductor device comprising:
an oxide semiconductor film over a first insulating film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a second insulating film including a first portion over the source electrode; a third insulating film including a second portion over the drain electrode; and a fourth insulating film including a third portion over the second insulating film, the third insulating film, and the oxide semiconductor film, wherein a first amount of oxygen molecules released from the first portion and a second amount of oxygen molecules released from the second portion are each smaller than a third amount of oxygen molecules released from the third portion in thermal desorption spectroscopy.