发明名称 |
METHOD OF FABRICATING NITRIDE FILM AND METHOD OF CONTROLLING COMPRESSIVE STRESS OF THE SAME |
摘要 |
The present invention relates to a method of fabricating a nitride film, which may easily control compressive stress while stably maintaining the film quality using the atomic layer deposition, and the nitride film having compressive stress is formed on a substrate by performing a unit cycle at least one time, the unit cycle including: a first step of providing a source gas on the substrate to absorb at least of the source gas on the substrate; a second step of providing a first purge gas on the substrate; a third step of forming a unit deposition film on the substrate by providing the substrate with a stress controlling gas including a nitrogen gas (N2) and a reaction gas containing nitrogen components (N) other than the nitrogen gas (N2) in a plasma state; and a fourth step of providing a second purge gas on the substrate. |
申请公布号 |
US2015249004(A1) |
申请公布日期 |
2015.09.03 |
申请号 |
US201514630864 |
申请日期 |
2015.02.25 |
申请人 |
WONIK IPS CO., LTD. |
发明人 |
LEE Kyungeun;LA Doohyun;CHANG Junseok;CHO Byungchul;RYU Dongho;PARK Juhwan;KIM Youngjun |
分类号 |
H01L21/02;C23C16/44;C23C16/34;C23C16/455 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating a nitride film, in which a nitride film having compressive stress is formed on a substrate by performing a unit cycle at least one time, the unit cycle comprising:
a first step of providing a source gas on the substrate to adsorb at least a part of the source gas on the substrate; a second step of providing a first purge gas on the substrate; a third step of forming a unit deposition film on the substrate by providing the substrate with a stress controlling gas comprising a nitrogen gas (N2) and a reaction gas containing nitrogen components (N) other than the nitrogen gas (N2) in a plasma state; and a fourth step of providing a second purge gas on the substrate. |
地址 |
Gyeonggi-do KR |