LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE INTEGRATION

摘要

An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

主权项

1. An epitaxy method, comprising:
providing a crystalline substrate material; growing an insulator on the substrate material; opening the insulator to form exposed areas of the substrate material; depositing silicon on the exposed areas of the substrate material to form epitaxial silicon on the exposed areas and form non-epitaxial silicon in other than the exposed areas in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius; and etching the non-epitaxial silicon using a plasma to further epitaxial deposition of silicon over the exposed areas.