发明名称 FILM DEPOSITION DEVICE
摘要 A film deposition device (1) is provided which forms a film by performing a PVD treatment on a surface of a substrate (W) and can enhance uniformity in thickness of the film. The film deposition device includes a vacuum chamber (2) that accommodates substrates (W), plural evaporation sources that are installed on an inner wall surface of the vacuum chamber, and a substrate support member (3) that causes the substrates (W) to move in the vacuum chamber (2) while supporting the plural substrates (W). The plural evaporation sources are arranged to be parallel to a direction along a table rotation axis and include a first evaporation source which is at least one of the evaporation sources (4a, 4b) located to face both ends of the substrates (W) and second evaporation sources (4b, 4c) adjacent to the inside of the first evaporation source. The first evaporation source is disposed to further protrude toward the substrates (W) than the second evaporation source.
申请公布号 US2015247233(A1) 申请公布日期 2015.09.03
申请号 US201314427721 申请日期 2013.11.13
申请人 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) 发明人 Fujii Hirofumi
分类号 C23C14/24;C23C14/50 主分类号 C23C14/24
代理机构 代理人
主权项 1. A film deposition device that forms a film on surfaces of a plurality of substrates by performing a PVD treatment thereon, comprising: a vacuum chamber that accommodates the plurality of substrates; a substrate support member that is installed in the vacuum chamber and that causes the substrates to move in the vacuum chamber while supporting the substrates; and a plurality of evaporation sources that are installed on an inner wall surface of the vacuum chamber and that are arranged in a line in a direction intersecting a direction in which the substrate support member causes the substrates to move, wherein the plurality of evaporation sources include a first evaporation source which is at least one of two evaporation sources located at both ends in the direction in which the plurality of evaporation sources are arranged out of the plurality of evaporation sources and a second evaporation source adjacent to the first evaporation source, and wherein the first evaporation source is disposed to further protrude toward the substrates than the second evaporation source.
地址 Kobe-shi, Hyogo JP