COBALT PRECURSORS FOR LOW TEMPERATURE ALD OR CVD OF COBALT-BASED THIN FILMS

摘要

Cobalt silylamide and cobalt carbonyl precursors are described, which are usefully employed in vapor deposition processes, such as chemical vapor deposition and atomic layer deposition, to deposit cobalt and to form high purity cobalt-containing films at temperatures below 400° C. These precursors and processes can be utilized in the manufacture of integrated circuitry and production of devices such as microprocessors, and logic and memory chips.

主权项

1. A method of depositing cobalt, comprising volatilizing a cobalt precursor to form precursor vapor, and depositing cobalt from the precursor vapor in a vapor deposition process, wherein the cobalt precursor is selected from the group consisting of:
(a) cobalt hexacarbonyl complex precursors of the formula: wherein R1 and R2 may be the same as or different from one another, and each is independently selected from among H, C1-C4 alkyl, silyl-substituted alkyl, dialkylamide, ethylene, acetylene, alkynes, substituted alkenes, C1-C4 substituted alkynes, silylalkyl, silylamide, trimethylsilyl, trialkylsilyl-substituted alkynes, and trialkylsilylamido-substituted alkynes, and wherein R1 and R2 are not both H; (b) cobalt silylamide precursors; (c) cobalt (0) carbonyl complex precursors including at least one ligand selected from the group consisting of alkenes, allenes, alkynes, and Lewis base ligands; (d) cobalt hexacarbonyl dinitrile precursors of the formula [RN≡C—Co(CO)3]2, wherein R is independently selected from among H, C1-C4 alkyl, silyl-substituted alkyl, dialkylamide, ethylene, acetylene, alkynes, substituted alkenes, C1-C4 substituted alkynes, silylalkyl, silylamide, trimethylsilyl, trialkylsilyl-substituted alkynes, and trialkylsilylamido-substituted alkynes; and (e) cobalt dicarbonyl nitrile precursors of the formula (CO)2CoN≡O(C≡NR) wherein R is independently selected from among H, C1-C4 alkyl, silyl-substituted alkyl, dialkylamide, ethylene, acetylene, alkynes, substituted alkenes, C1-C4 substituted alkynes, silylalkyl, silylamide, trimethylsilyl, trialkylsilyl-substituted alkynes, and trialkylsilylamido-substituted alkynes.