MINIMIZING HARMFUL EFFECTS CAUSED BY RETICLE DEFECTS BY RE-ARRANGING IC LAYOUT LOCALLY

摘要

Provided is a method of fabricating a semiconductor device. An integrated circuit (IC) layout plan is obtained. The IC layout plan contains critical features and non-critical features. Locational information regarding a defect on a blank reticle is obtained. The blank reticle is a candidate reticle for being patterned with the IC layout plan. Based on the locational information regarding the defect and the IC layout plan, a determination is made that at some of the critical features will intersect with the defect if the blank reticle is patterned with the IC layout plan, regardless of whether the IC layout plan is globally manipulated or not before being patterned onto the blank reticle. In response to the determination, selected local portions of the IC layout plan are re-arranged such that none of the critical features will intersect with the defect if the blank reticle is patterned with the IC layout plan.

主权项

1. A method, comprising:
receiving an integrated circuit (IC) layout, the IC layout containing critical features and non-critical features; receiving defect information of a blank reticle with respect to a defect of the blank reticle; determining, based on the defect information and the IC layout, that the defect will cause interference with at least some of the critical features if the blank reticle is patterned with the IC layout; and in response to the determining, re-arranging the IC layout in a localized manner such that the defect will no longer cause interference with the critical features of the re-arranged IC layout.