EPITAXIAL-SILICON-WAFER MANUFACTURING METHOD AND EPITAXIAL SILICON WAFER

摘要

This epitaxial-silicon-wafer manufacturing method includes an epitaxial-film formation step (step S2) in which an epitaxial film is grown on a silicon wafer to which boron has been added, the resistivity of said silicon wafer being less than or equal to 100 mΩ∙cm, and a heat-treatment step (step S3) in which the epitaxial silicon wafer is heat-treated at a temperature less than 900°C.