摘要 |
The invention relates to a disc-shaped thyristor (1) for throughplating a plurality of semiconductor components by means of clamping means (4, 13) producing a clamping force (F), comprising: a housing (2, 3, 7, 8); at least one first semiconductor component (6) of a first type received in the housing; at least one second semiconductor component (5) of a second type, different from the first type, received in the housing; wherein the housing (2, 3, 7, 8) comprises at least one metallic pressure plate (2), which spreads over the first (6) and second (5) semiconductor component and is aligned substantially at right angles to the clamping force (F), for clamping the first and second semiconductor components, wherein the pressure plate (2) is configured in such a way that the clamping force (F) acts thereon in a locally delimited (9) manner in order to clamp the first (6) and the second (5) semiconductor component by way of the pressure plate (2), wherein the first semiconductor component (6) is arranged below the local sphere of influence (9) of the clamping force (F) and the second component (5) is arranged at least partly outside of the local sphere of influence (9). |