ETCHING COMPOSITION, ETCHING METHOD EMPLOYING SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCT

摘要

Provided is an etching method for a substrate in which a first material containing NiPt, and at least one element from among In, Al, Ga, Sb, and As, is present, the etching method involving application of an acidic etching composition containing halogen ions and nitric acid or nitrate ions to a substrate.