GALLIUM NITRIDE SEMICONDUCTOR BASED VERTICAL LIGHT EMITTING DIODE USING MAGNESIUM FLUORIDE AS CURRENT BLOCKING LAYER AND MANUFACTURING METHOD THEREOF

摘要

A manufacturing method for a vertical light emitting diode of the present invention comprises: forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate in a serial order; forming a current blocking layer on the second conductive semiconductor layer using deposition equipment; forming a second electrode on the current blocking layer; and forming a first electrode on the first conductive semiconductor layer by removing the substrate and performing deposition with the deposition equipment for the current blocking layer. According to the present invention, there are provided effects that an electrical function is improved through the current cut-off of the magnesium fluoride (MgF2) material and an optical function is also improved by the low refractive index of the magnesium fluoride (MgF2) at the same time.