| 摘要 |
<P>PROBLEM TO BE SOLVED: To maintain desired transfer pattern formation accuracy. <P>SOLUTION: In the exposure method for forming a transfer pattern of a pattern on a substrate, by projecting the exposure light image of the pattern provided on a mask to the substrate, the transfer pattern is measured, either the position and/or the attitude of an exposure light image on the image surface is adjusted according to a mask elongation/contraction correction value calculated by correcting the measurement result with a predetermined contribution during projection, and then the adjusted exposure light image is projected to the substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
