| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition showing a large dissolution contrast and reducing LWR both in alkali development as positive development and in organic solvent development as positive development, and a method for forming a pattern using the composition.SOLUTION: The resist composition comprises a polymeric compound having a repeating unit in which a hydrogen atom of a carboxyl group and/or a hydroxy group is substituted with an acid-labile group, and a sulfonium salt or an iodonium salt of N-substituted aminophenyl sulfonate having an ester structure having an acid dissociable group. A photoresist film containing the sulfonium salt or the iodonium salt exhibits excellent resolution and a wide focus margin in a positive pattern by alkali development and in a negative pattern by organic solvent development. |
