Transistor having a stressed body

摘要

A transistor includes a body and a semiconductor region configured to stress a portion of the body. For example, stressing a channel of the transistor may increase the mobility of carriers in the channel, and thus may reduce the “on” resistance of the transistor. For example, the substrate, source/drain regions, or both the substrate and source/drain regions of a PFET may be doped to compressively stress the channel so as to increase the mobility of holes in the channel. Or, the substrate, source/drain regions, or both the substrate and source/drain regions of an NFET may be doped to tensile stress the channel so as to increase the mobility of electrons in the channel.

主权项

1. A transistor, comprising:
a silicon-on-insulator (SOI) substrate including a substrate layer, an insulator layer and a semiconductor layer; a trench isolation structure formed in said SOI substrate to extend completely through the semiconductor layer and the insulator layer and at least partially into the substrate layer; a source, body and drain of said transistor formed in the semiconductor layer; and a doped region formed in the substrate layer and extending under the insulator layer from one edge of the trench isolation structure to an opposite edge of the trench isolation structure and extending contiguously under the source, body and drain, said doped region including a stress-inducing dopant that induces stress within the doped region of the substrate layer under the insulator layer that is transferred through the insulator layer to a channel region of the body.