| 主权项 |
1. A method for manufacturing a thin film transistor array substrate, comprising:
forming a passivation layer and a resin layer on a substrate in sequence, wherein, the resin layer adopts a photosensitive resin material; removing a part of the resin layer through a patterning process, so as to form a resin-layer via hole passing through the resin layer, the formation of the resin-layer via hole includes:
the resin layer being subjected to an exposure and development process, so as to form the resin-layer via hole; andthe residual resin at the resin-layer via hole being removed by using an ashing process,wherein, an etch gas used in the ashing process for removing the residual resin at the resin-layer via hole includes a fluorine containing gas and an oxygen gas, and the flow rate of the fluorine containing gas is in the range of 20-100 sccm, the flow rate of oxygen gas is in the range of 500-1000 sccm, and mass ratio of the oxygen gas to the fluorine containing gas is in the range of 8:1-12:1; etching the passivation layer under the resin-layer via hole, so as to form a via hole passing through the resin layer and the passivation layer; treating the via hole with an etching process, so that a sidewall at the resin layer and a sidewall at the passivation layer for the via hole smoothly adjoin, wherein, a dry etching with an etch gas including a fluorine containing gas and an oxygen gas is used for the etching of the passivation layer under the resin-layer via hole, and mass of the oxygen gas is smaller than or equal to mass of the fluorine containing gas,
wherein, in the dry etching of the passivation layer under the resin-layer via hole, mass ratio of the oxygen gas to the fluorine containing gas is in the range of 1:3-1:1, and the flow rate of the fluorine containing gas is in the range of 300-600 sccm, and the flow rate of the oxygen gas is in the range of 300-800 sccm; and wherein, an ashing process with an etch gas including a fluorine containing gas and an oxygen gas is used for the treatment of the via hole with the etching process, and mass of the oxygen gas is larger than mass of the fluorine containing gas,
wherein, in the process of treating the via hole with the etching process, mass ratio of the oxygen gas to the fluorine containing gas is in the range of 15:1-25:1, and the flow rate of the fluorine containing gas is in the range of 20-200 sccm and the flow rate of the oxygen gas is in the range of 500-2000 sccm. |
