| 发明名称 | Solid-state imaging device, method of manufacturing the same, and electronic apparatus | ||
| 摘要 | A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit. | ||
| 申请公布号 | US9123653(B2) | 申请公布日期 | 2015.09.01 |
| 申请号 | US201213649548 | 申请日期 | 2012.10.11 |
| 申请人 | SONY CORPORATION | 发明人 | Yamaguchi Tetsuji |
| 分类号 | H04N5/335;H01L27/30;H01L27/146 | 主分类号 | H04N5/335 |
| 代理机构 | Sheridan Ross P.C. | 代理人 | Sheridan Ross P.C. |
| 主权项 | 1. A solid state imaging device comprising: a substrate having oppositely facing first and second surfaces; a photoelectric conversion unit layer having a light incident side facing away from the substrate; a first photoelectric conversion unit and a second photoelectric conversion unit within the substrate; and a third photoelectric conversion unit within the photoelectric conversion unit layer, the third photoelectric conversion unit including: a photoelectric conversion material layer;an upper electrode on a surface of the photoelectric conversion material layer facing a light incident surface; anda lower electrode on a surface of the photoelectric conversion material layer facing the substrate,wherein, a signal charge in the third photoelectric conversion unit is transferred therefrom via the lower electrode. | ||
| 地址 | JP | ||